PART |
Description |
Maker |
NAND04G-B |
1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位,4千兆位,8千兆112 Byte/1056字的页面.8V/3V,NAND闪存
|
STMicroelectronics N.V.
|
NAND02GR3B2BZA1 NAND02GR4B2BZA6 NAND02GR3B2BZB1 NA |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位,2112 Byte/1056字的页面.8V/3V,NAND闪存 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位,2112 Byte/1056字的页面1.8V/3V,NAND闪存
|
意法半导 STMicroelectronics N.V.
|
NAND16GW3C4B NAND08GW3C4BN1E NAND16GW3C4BN1E NAND0 |
8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
|
Numonyx B.V
|
NAND08GW3C4AZL1E NAND08GW3C2AZL1E |
8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
|
Numonyx B.V
|
NAND04GX3C2A |
4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory
|
http://
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NAND01G-A NAND128-A NAND256-A NAND01GR3A0AN1 NAND0 |
128 Mbit / 256 Mbit / 512 Mbit / 1 Gbit (x8/x16) 528 Byte/264 Word Page / 1.8V/3V / NAND Flash Memories 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics ST Microelectronics
|
NAND01G-A NAND01GW3A NAND01GW3A0AN6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics
|
OPB992L55 OPB992P15 OPB992N11 OPB992L15 OPB990N51 |
128K SPI SERIAL EEPROM W/ 64-BYTE PAGE, 1.8V, -40C to 85C, 8-SOIC 150mil, TUBE 128K SPI SERIAL EEPROM W/ 64-BYTE PAGE, 1.8V, -40C to 85C, 8-TSSOP, T/R 128K SPI SERIAL EEPROM W/ 64-BYTE PAGE, 1.8V, -40C to 85C, 8-TSSOP, TUBE 128K SPI SERAL EEPROM W/ 64 BYTE PAGE, 1.8V, -40C to 85C, 8-PDIP, TUBE 8K SPI 1K X 8, 16B PAGE, 1.8V SER EE, -40C to 85C, 8-SOIC 150mil, TUBE 2K, 256 X 8, 1.8V SER EE, -40C to 125C, 6-SOT-23, T/R 2K, 256 X 8, 1.8V SER EE, -40C to 125C, 8-TSSOP, T/R 2K, 256 X 8, 1.8V SER EE, -40C to 85C, 8-SOIC 150mil, TUBE
|
TT electronics OPTEK Technology Central Semiconductor, Corp.
|
AT28BV64B-20SC AT28BV64B-20SI AT28BV64B-20TC AT28B |
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection 64K EEPROM with 64-Byte Page & Software Protection, 2.7-Volt
|
Atmel
|
LC321664AJ LC321664AM LC321664AT-80 |
1 MEG (65536 words X 16 bits) DRAM Fast Page Mode, Byte Write
|
SANYO[Sanyo Semicon Device]
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